Multilayer Substrate Architectures for Integrated Power and Signal Packaging

This Direct-to-Phase II SBIR proposal advances a revolutionary multilayer aluminum oxynitride (AlON)/copper (Cu) substrate platform that consolidates power, signal, and control functions into a unified, compact, and ruggedized packaging architecture for defense electronics. The innovation addresses longstanding limitations in thermal, electrical, and mechanical integration that constrain next-generation Department of the Air Force (DAF) platforms—particularly in directed energy weapons (DEWs), hypersonic vehicles, UAVs, and edge compute systems. Traditional packaging solutions such as direct bonded copper (DBC), active metal brazed (AMB), and thick ceramic substrates introduce parasitic loss, mechanical stress, and volumetric inefficiencies, hindering performance and reducing reliability in extreme environments.NGI’s patented conformal deposition process enables sub-30 ?m AlON layers to be precisely applied over 3D copper geometries, forming a high-dielectric-strength (>500 V/?m), thermally conductive (>30 W/m·K), and mechanically resilient stack. The multilayer architecture supports embedded signal/power routing, integrated passives (e.g., planar capacitors and inductors), and engineered topographies such as air cavities and recessed die pockets—capabilities inaccessible to legacy substrates. These features allow for dramatic reductions in system size, weight, and thermal load, while improving RF integrity, EMI suppression, and structural robustness under MIL-STD-relevant stress profiles.This Phase II effort will demonstrate reproducible multilayer stack fabrication, validate operational performance under high-frequency and high-power load conditions, and deliver test units for AFRL-aligned mission applications. Key activities include 3D CAD modeling, FEM simulation, high-cycle thermal/vibration testing, RF integrity validation, and full-stack integration of embedded passives. Outcomes will elevate the technology from TRL 4 to TRL 6 and position it for transition via AFRL/RDLC and AFRL/RQQE pathways. Beyond DAF adoption, the AlON substrate has dual-use potential in EV inverters, data centers, AI accelerators, and optical systems, where thermal, electromagnetic, and volumetric constraints mirror defense requirements.NGI owns all material related IP and has global exclusivity to the proprietary deposition technology, eliminating dependence on foreign ceramic supply chain. With support from AFRL, HiDEC, and NREL, and validated through engagements with Ford, Infineon, Danfoss, and Tecnisco, this program delivers a U.S.-based, transformational packaging solution that directly supports DoD modernization priorities while unlocking high-growth commercial opportunities.