Development of high-power near-UV semiconductor laser diodes
Award amount
$750,000Program and phase
SBIR · Phase IIAward year
2017Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- ADROIT MATERIALS, INC.
- Proposal award date
- 2017-09-30
- Contract end date
- 2021-02-18
- UEI
- LSK7AWA81NA1
- Solicitation number
- 16.1
- Topic code
- N161-005
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Novel Quantum Sensors Based on AlN
- Solar blind UVC detectors for efficient plume detection
- MMICs on Single Crystal AlN for Extreme RF Systems
- SOLAR-BLIND UVC AND VUV DETECTORS
- Solar-blind UVC detectors for efficient plume detection
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Compact Ultraviolet (UV) Laser Emitter in the 320-355 Nanometer (nm) Spectral Range
- III-Nitride Based Compact 320-355 nm UV Lasers
- Compact Ultraviolet (UV) Laser Emitter in the 320-355 Nanometer (nm) Spectral Range
- Development of high-power near-UV semiconductor laser diodes
- Compact Ultraviolet (UV) Laser Emitter in the 320-355 Nanometer (nm) Spectral Range
Research funding history
32 SBIR/STTR records share this UEI (2012–2025). Reported award amounts total $15,842,200. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration