SBIR/STTR Research Award

Development of high-power near-UV semiconductor laser diodes

Award identifier 5cd7dd97e9bda8f5869a946b3f8f2a7362b3f4169221b70d896c87ae5186c170Awarding agency Department of Defense · Navy

Award amount

$750,000

Program and phase

SBIR · Phase II

Award year

2017

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Award details

Awarding agency
Department of Defense
Branch
Navy
Recipient company
ADROIT MATERIALS, INC.
Proposal award date
2017-09-30
Contract end date
2021-02-18
UEI
LSK7AWA81NA1
Solicitation number
16.1
Topic code
N161-005

Research abstract

The overall objective of the proposed work is to demonstrate electrically pumped, high-efficiency and long-lifetime, near-UV, solid-state laser diodes (LDs) based on AlGaN MQWs grown on native, single crystalline GaN substrates. The targeted laser diodes will emit between 330 - 350 nm with an emission power exceeding 1 W. These lasers will find application in remote Raman spectroscopy applications, non-line of sight communication systems, and laser identification and detection systems. We will use n-type GaN substrates in order to achieve the first vertical AlGaN laser diode emitting in the UV. This configuration will enable more homogenous current injection, higher achievable pumping power, better thermal management, and, as a direct consequence, high output power.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

32 SBIR/STTR records share this UEI (2012–2025). Reported award amounts total $15,842,200. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration

Agency intelligence

Department of Defense

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