V-Band Terminal Low Noise Amplifier

QuinStar Technology, Inc. proposes to develop a low noise amplifier (LNA), operating at E-band frequencies (71-76 GHz), with optimized noise performance, enhanced linearity (high OIP3), and low power consumption. This will be accomplished by utilizing the latest state-of-the-art (SOA) device technology and innovative circuit techniques. The key to the noise performance is the short gate length (35 nm) InP HEMT device. For this technology, we propose to team with the industry leader, Northrop Grumman. Based on their models, simulations indicate MMIC noise figures of 1.1 dB at E-band frequencies. Recent measurements with low-noise InP MMICs from two different companies have largely substantiated these simulations. To enhance the amplifier linearity and reduce power consumption, we are proposing to employ the cascode circuit configuration. This technique has never been attempted before at these millimeter-wave frequencies. Simulations indicate that we can simultaneously improve the amplifier linearity while reducing the power consumption. In fact, 2-tone simulations indicate that we can increase the OIP3 to over 20 dBm with a chip power consumption of only 46 mW. Finally, this amplifier will be packaged using QuinStars SOA low-loss E-band waveguide packaging technology.