Radiation Hardened Gallium Nitride Devices for RF Amplifiers

There is a need for electronics to remain operational in harsh radiation environments. Although GaN (Gallium Nitride) electronics are more radiation-hardened than their silicon counterparts, it is necessary to further harden GaN electronics to meet the target radiation requirements. The proposed work involves collaborating closely with the selected foundry to apply innovative RHBD (radiation-hardness-by-design) techniques to enhance radiation resilience. A GaN HEMT-based RF power amplifier is chosen as the baseline device and circuit for validating design concepts. Phase I of the program will focus on foundry selection, device/circuit design, and simulation, while Phase II will concentrate on device fabrication and validation of radiation performance.Ý