SBIR/STTR Research Award
Doping and compensation control in AlGaN for high power devices
Award amount
$1,000,000Program and phase
SBIR · Phase IIAward year
2017Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- ADROIT MATERIALS, INC.
- Proposal award date
- 2017-07-18
- Contract end date
- 2018-07-17
- UEI
- LSK7AWA81NA1
- Solicitation number
- NA
- Topic code
- A12A-T019
Research abstract
The overall objective of the proposed work is to achieve a broad range of electrical properties in AlGaN not available today. The primary focus of this work will be enabling technology for low (1019 cm-3) doping concentrations in AlGaN, which are the main obstacles in the development of various new technologies based on this material, the work will benefit also the mid-range of doping concentrations by achieving higher doping efficiency and higher mobility by reducing compensation.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Novel Quantum Sensors Based on AlN
- Solar blind UVC detectors for efficient plume detection
- MMICs on Single Crystal AlN for Extreme RF Systems
- SOLAR-BLIND UVC AND VUV DETECTORS
- Solar-blind UVC detectors for efficient plume detection
Research funding history
32 SBIR/STTR records share this UEI (2012–2025). Reported award amounts total $15,842,200. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration