SBIR/STTR Research Award

Advanced SiC MOSFET for Automotive Applications

Award identifier acd24f6fbb1c1605952087054e589ad4ce562c4914c8faa84d2f73f6de264302Awarding agency Department of Energy

Award amount

$149,652

Program and phase

SBIR · Phase I

Award year

2017

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
Global Power Technologies Group, Inc.
Proposal award date
2017-06-12
Contract end date
2018-03-11
UEI
WD7JA3UG2MS7
Solicitation number
DE-FOA-0001619
Topic code
14b

Research abstract

Advances in silicon carbide (SiC) MOSFETs promise to revolutionize power electronics, including for transportation. Adoption of SiC power devices in electric vehicle drives is hindered by high cost and unproven reliability in vehicle applications. Fabrication of low on-resistance, high performance SiC DMOSFETs including integrated current sense on 150 mm wafers using an area-efficient design will reduce device cost and improve system robustness, speeding adoption of this exciting new technology. Silicon carbide semiconductor devices are predicted to become a $1B industry by 2023. Adoption of a new technology requires technical capability, competitive price and confidence in reliability. Improved control strategies using the integrated current sense feature will improve confidence in silicon carbide technology and accelerate adoption of SiC devices.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

2 SBIR/STTR records share this UEI (2016–2017). Reported award amounts total $299,604. Reported amounts are not federal obligations.

Phases: Phase I

Agencies: Department of Energy

Agency intelligence

Department of Energy

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