Integrated Silicon Carbide Power Electronic Block

Advances in silicon carbide (SiC) MOSFETs promise to revolutionize power electronics, including for transportation. Adoption of SiC power devices in electric vehicle drives is hindered by high cost and unproven reliability in vehicle applications. Statement of how this Problem or Situation is Being Addressed Fabrication of low on-resistance, high performance SiC DMOSFETs and monolithically integrated DMOSFET-JBS diodes on 150 mm wafers using an area-efficient integrated design will reduce device cost to parity with incumbent silicon power devices and speed adoption of this exciting new technology. Commercial Applications and Other Benefits Silicon carbide semiconductor devices are predicted to become a $1B industry by 2023. Adoption of a new technology requires technical capability, competitive price and confidence in reliability. Extensive reliability testing will improve confidence in silicon carbide technology and accelerate adoption of SiC devices. Key Words Silicon Carbide, SiC, MOSFET, JBS Diode, Semiconductor