SBIR/STTR Research Award

High Density Chip Interconnect Technology Using High Density Glass Interposers

Award identifier 2c888988be945b44db5ca2387c9b9b14bcbfa1260152542d375e22885644a26fAwarding agency Department of Energy

Award amount

$145,669

Program and phase

SBIR · Phase I

Award year

2017

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
COLLIER VENTURES, INC.
Proposal award date
2017-06-12
Contract end date
2018-02-11
UEI
P6DNVCS9C7F4
Solicitation number
DE-FOA-0001619
Topic code
27e

Research abstract

Modern particle physics experiments require “intelligent detectors” with dense interconnects and distributed intelligence in very large area detector systems. Available packaging and interconnect technologies directly limit the performance and capabilities of these systems. Interposers are interconnect elements that use through-silicon or through-glass vias to replace the PC board technology currently used for connecting chips and can improve the interconnect density by more than two orders of magnitude. The goal of this project is to fabricate a thru glass via interposer that will allow top to bottom side interconnects in the tens of microns. Having a thru glass interposer with interconnects in the tens of microns will benefit electrons industry that focus on 3D packaging. In addition to commercial, medical applications, such as CAT scan which have resolutions in the micron or larger range, will now be able to use these interposers to diagnose in the tens of microns.

Technology keywords

Not reported

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Agency intelligence

Department of Energy

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