Advanced Silicon Diode Switch for HPRF Systems
Award amount
$1,002,136Program and phase
STTR · Phase IIAward year
2017Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- RADIATION DETECTION TECHNOLOGIES, INC.
- Proposal award date
- 2017-02-15
- Contract end date
- 2020-11-16
- UEI
- G4A7QVKSENF5
- Solicitation number
- 15.A
- Topic code
- N15A-T023
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- ZnSe Material Production and Single Crystal Growth by Melt-Solution Using the High-Pressure Bridgman Method
- ZnSe Material Production and Single Crystal Growth by Melt-Solution Using the High-Pressure Bridgman Method
- The Rapid-Production of the High-Performance and Affordable Cadmium Telluride and Cadmium Zinc Telluride for Medical Imaging Applications.
- Commercial Production of the Group-V Doped Polycrystalline CdTe Source Material for the Next-Generation Photovoltaics
- Novel Manufacturing Process for Advanced Low-Cost High-Power Epitaxy Silicon Switches
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- GaN for High Rep Rate Pulsed Power
- Advanced Silicon Diode Switch for HPRF Systems
- Advanced Solid State Switch (Diode) Materials for High Rep Rate Pulse Power Systems and High Power Radio Frequency (HPRF) Applications
Research funding history
30 SBIR/STTR records share this UEI (2013–2025). Reported award amounts total $18,621,981. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Energy, Department of Defense, National Aeronautics and Space Administration, Department of Health and Human Services