SBIR/STTR Research Award
GaN for High Rep Rate Pulsed Power
Award amount
$80,000Program and phase
STTR · Phase IAward year
2015Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2015-07-06
- Contract end date
- 2016-05-06
- UEI
- GDV6R1VLRVN7
- Solicitation number
- 2015.1
- Topic code
- N15A-T023
Research abstract
Kyma will develop and model a modular high rep rate (>100kHz) photoconductive switch using GaN and commercial-off-the-shelf laser diodes. The switch will be designed to switch >1.5kV at >150A in 5-10ns.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Advanced Silicon Diode Switch for HPRF Systems
- Advanced Silicon Diode Switch for HPRF Systems
- Advanced Solid State Switch (Diode) Materials for High Rep Rate Pulse Power Systems and High Power Radio Frequency (HPRF) Applications
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration