SBIR/STTR Research Award
Thin Film High-k Dielectric Semiconductor Materials Development for IRFPAs
Award amount
$99,999Program and phase
SBIR · Phase IAward year
2016Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- Ballistic Devices, Inc
- Proposal award date
- 2016-09-14
- Contract end date
- 2017-03-13
- UEI
- ECULH4LBQNP1
- Solicitation number
- 2016.1
- Topic code
- A16-039
Research abstract
A novel high capacitance density structure that exceeds 80fF/micron-sq is presented.The design of the system is compatible with modern CMOS technology and will enable a circuit designer to produce high accuracy readout-IC's for IRFPA's.The metal-insulator-metal capacitor utilizes a high-k dielectric system that is within the thermal budget of a CMOS process.Additionally, an enhanced design is suggested that will allow for the capacitance density to exceed 120 fF/micron-sq.This provides a roadmap toward further innovation and extension of the technology beyond IRPFA's.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High Speed and High Voltage Capacitors for Naval HPRF Directed Energy Applications
- High Speed and High Voltage Capacitors for Naval HPRF Directed Energy Applications
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Thin Film High-k Dielectric Semiconductor Materials Development for IRFPAs
- Thin Film High-k Dielectric Semiconductor Materials Development for IRFPAs
Research funding history
3 SBIR/STTR records share this UEI (2015–2016). Reported award amounts total $1,532,654. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense