Thin Film High-k Dielectric Semiconductor Materials Development for IRFPAs
Award amount
$99,996Program and phase
SBIR · Phase IAward year
2016Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- MICROSOL TECHNOLOGIES INC.
- Proposal award date
- 2016-09-12
- Contract end date
- 2017-03-11
- UEI
- L7J9RY5L18R7
- Solicitation number
- 2016.1
- Topic code
- A16-039
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low Temperature Plasma Enhanced Processing for Microelectronics Manufacturing
- Low Temperature Plasma Enhanced Processing for Microelectronics Manufacturing
- Modularized High Efficiency, Low Frequency
- Modularized High Efficiency, Low Frequency Vibration Energy Harvesting Power Supply System
- SBIR Phase I: 3-D Integrated Hybrid Energy Harvesting and Storage Devices
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Thin Film High-k Dielectric Semiconductor Materials Development for IRFPAs
- Thin Film High-k Dielectric Semiconductor Materials Development for IRFPAs
Research funding history
6 SBIR/STTR records share this UEI (2014–2023). Reported award amounts total $2,149,603. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, Department of Energy, National Science Foundation