SBIR/STTR Research Award

Thin Film High-k Dielectric Semiconductor Materials Development for IRFPAs

Award identifier d36ea8c12d60e62764753098eac6c6e33ad9aa6a20ff5b4bcec8e3455cc1397cAwarding agency Department of Defense · Army

Award amount

$99,996

Program and phase

SBIR · Phase I

Award year

2016

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
MICROSOL TECHNOLOGIES INC.
Proposal award date
2016-09-12
Contract end date
2017-03-11
UEI
L7J9RY5L18R7
Solicitation number
2016.1
Topic code
A16-039

Research abstract

In this Small Business Innovation Research Phase I effort, MicroSol Technologies Inc. and University of Texas at Dallas (UTD) will collaborate to develop a high-k material for application in IR image sensor readout integrated circuits. High-k Al2O3/TiOx nanolaminates will be in-situ deposited by atomic layer deposition (ALD).Material properties will be optimized to achieve a high dielectric constant and low leakage current. 3-D structured metal insulator metal (MIM) capacitors compatible with 180nm and 250nm CMOS foundry process flows will be designed, fabricated, and characterized to demonstrate charge capacitive density greater than 80fF/um2. Material will be characterized and optimized for thickness uniformity, charge density, leakage current, breakdown voltage, and long-term reliability.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

6 SBIR/STTR records share this UEI (2014–2023). Reported award amounts total $2,149,603. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Energy, National Science Foundation

Agency intelligence

Department of Defense

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