SBIR Phase I: Thin crystalline technologies for advanced power transistors
Award amount
$150,000Program and phase
SBIR · Phase IAward year
2016Award details
- Awarding agency
- National Science Foundation
- Branch
- Not reported
- Recipient company
- APPLIED NOVEL DEVICES, INC.
- Proposal award date
- 2016-01-01
- Contract end date
- 2016-06-30
- UEI
- VZANADJA6MA4
- Solicitation number
- Not reported
- Topic code
- S
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- ANDFET – A new class of Si power MOSFETs with near zero reverse recovery
- SBIR Phase II: Thin crystalline technologies for advanced power transistors
- High Performance, Flexible, Silicon-Based Photovoltaic Devices
- High Performance, Flexible, Silicon-Based Photovoltaic Devices
- Low Power Monolayer MoS2 Transistors for RF Applications
Research funding history
9 SBIR/STTR records share this UEI (2014–2023). Reported award amounts total $4,765,210. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation