SBIR/STTR Research Award

Low Power Monolayer MoS2 Transistors for RF Applications

Award identifier 1325b92da15e56a60d69df82453a593055e72344aa602d4f9551307b6bc573c3Awarding agency Department of Defense · Army

Award amount

$1,000,000

Program and phase

STTR · Phase II

Award year

2015

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
APPLIED NOVEL DEVICES, INC.
Proposal award date
2015-11-03
Contract end date
2017-10-29
UEI
VZANADJA6MA4
Solicitation number
2014.0
Topic code
A14A-T008

Research abstract

In Phase II we propose to optimize wafer scale MoS2 deposition process to fabricate uniform large area monolayer and multi-layer MoS2 films and analyze the defects on these films. Monolayer regions that can result in device periphery larger than 50m will be targeted. Further, the charge transfer doping process using TiOx will be optimized for MoS2 multi-layer and RF transistors will be fabrication on these multilayers. The device structure (geometry, length of underlap region, choice of gate dielectric, gate and contact materials) will be optimized to meet DC and RF performance targets of this solicitation. The transistors will be targeted to show an RF performance of fmax > 20GHz

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

9 SBIR/STTR records share this UEI (2014–2023). Reported award amounts total $4,765,210. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Science Foundation

Agency intelligence

Department of Defense

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