SBIR/STTR Research Award
W-band GaN IMPATT Devices
Award amount
$149,962Program and phase
SBIR · Phase IAward year
2016Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- QUINSTAR TECHNOLOGY, INCORPORATED
- Proposal award date
- 2015-11-02
- Contract end date
- 2017-03-01
- UEI
- DZZFRQ8FLMP2
- Solicitation number
- 2015.2
- Topic code
- N152-114
Research abstract
QuinStar Technology, Inc. proposes to develop a GaN IMPATT (IMPact-ionization Avalanche Transit Time) device operating at W-band for power generation applications. The approach is based on advanced material development of low defect GaN vertical structures, comprehensive device modeling and optimization, and state-of-the-art fabrication and packaging techniques, supported by a strong team and commercialization strategy.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Radiation-Hardened Compact W-band Transceiver
- Radiation Hardened Gallium Nitride Devices for RF Amplifiers
- High PAE 100W W-Band GaN SSPA for Planetary Sensing
- High Linearity V-band Low Noise Amplifier
- D-Band Solid State Power Amplifier for Airborne Radar
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
54 SBIR/STTR records share this UEI (1996–2025). Reported award amounts total $21,917,223. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration