Hydrogenation of SLS for Defect Mitigation of III-V-based Infrared Detectors

ABSTRACT:Type II strained-layer superlattice (SLS) materials are predicted to have much lower Auger recombination rates than those of HgCdTe, leading to lower dark currents; however, they are limited by Shockley-Read-Hall recombination via defect states near mid-gap. Hydrogenation is a technique that has proven to be effective in electrically passivating defects in various semiconductor-based devices. Amethyst Research and Teledyne Imaging Sensors are partnering to evaluate the use of photon-assisted hydrogenation processes to passivate defects in SLS devices. The photon-assisted process has a number of unique advantages for hydrogen insertion over more conventional hydrogenation processes that can compromise the materials/devices. The effectiveness of hydrogenation will be evaluated for its ability to increase minority carrier lifetime and to decrease dark current. The teaming of Amethyst and Teledyne provides a unique capability for evaluation of hydrogenation passivation of defects.BENEFIT:Defect passivation technology developed by the Amethyst-Teledyne team will provide a near-term, cost-effective method of improving performance that can readily be integrated into the existing process flow of FPAs and will eventually be available to all US manufacturers. Hydrogenation enhanced operability and yield gains will translate to significant reductions in cost and improved manufacturability of SLS FPAs.