SBIR/STTR Research Award
Gallium Arsenide (GaAs) - Superlattice Light Emitting Diode Arrays (SLEDS)
Award amount
$1,000,000Program and phase
SBIR · Phase IIAward year
2015Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- Chip Design Systems Inc.
- Proposal award date
- 2015-05-13
- Contract end date
- 2017-05-12
- UEI
- PN31T8TQRHX3
- Solicitation number
- 2013.2
- Topic code
- MDA13-017
Research abstract
We propose to monolithically integrate an infrared light emitting diode (IRLED) array on the backside of a GaAs substrate whose frontside contains an array of driver circuits. We will develop smaller GaAs substrate via technology to enable smaller pixel pitch and realize a large-scale GaAs-SLEDS read-in integrated circuit (RIIC). Our team consists of experts in IRLED fabrication, RIIC design, GaAs IC fabrication, system design, and thermal modeling. Approved for Public Release 15-MDA-8169 (20 March 15)
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Advanced Superlattice LED System (ASLEDS)
- TSLEDS Scene Projector Electronics
- Next-Gen Infrared Scene Projector for Hypersonic Hardware-in-the-loop Test and Evaluation (ASLEDS)
- High Fidelity IR Clutter Generator for Missile Warning Sensors (HSLEDS)
- Next Generation Infrared Scene Projector for Testing MWIR Systems
Research funding history
15 SBIR/STTR records share this UEI (2013–2023). Reported award amounts total $8,933,982. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense