Middle Ultraviolet Semiconductor Laser Diode

Ostendo Technologies, with partners HexaTech, Inc. and the Ohio State University, propose a comprehensive mid-UV laser diode device design, simulation, and materials development program to yield CW 280 nm lasers. Ostendo will utilize its state-of-the-art Optoelectronics Device Modeling Software to simulate and refine the performance of laser diode designs in an iterative fashion to reduce development time and cost. Current state-of-the-art UV laser structures will be enhanced with tunnel junctions to improve hole injection and reduce contact resistance. Ostendo will further begin to establish the materials foundation for the device fabrication to occur in Phase II by 1) establishing the necessary AlN substrate pre-treatment chemistry to fully realize the structural benefits of free-standing AlN substrates, and 2) develop HVPE-based p-type AlGaN for hole injection. This aggressive yet feasible project will yield a pathway for 280 nm laser fabrication in Phase II.