SBIR/STTR Research Award
High Power Vertical Gallium Nitride (GaN) Transistors on Native GaN Substrates for Power Switching Applications
Award amount
$585,744Program and phase
SBIR · Phase IIAward year
2014Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- Avogy
- Proposal award date
- 2014-08-20
- Contract end date
- 2016-02-20
- UEI
- DLJEK6XN1JX6
- Solicitation number
- 2012.2
- Topic code
- N122-135
Research abstract
In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 5000V or higher, normally-off operation, and a drain current rating of 1A is proposed. These devices will feature vertical current flow, a threshold voltage of >2V, minimal to no dynamic on-resistance (such that Rac/Roc 50%. This Phase II proposal is a continuation of the work done in the Phase I effort.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Vertical GaN transistors on bulk GaN substrates
- Vertical GaN transistors on bulk GaN substrates
- High Power Vertical Gallium Nitride (GaN) Transistors on Native GaN Substrates for Power Switching Applications
Research funding history
4 SBIR/STTR records share this UEI (2013–2014). Reported award amounts total $2,061,148. Reported amounts are not federal obligations.
Phases: Phase II, Phase I
Agencies: Department of Defense, Department of Energy