SBIR/STTR Research Award
High Power Vertical Gallium Nitride (GaN) Transistors on Native GaN Substrates for Power Switching Applications
Award amount
$137,979Program and phase
SBIR · Phase IAward year
2013Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- Avogy
- Proposal award date
- 2012-12-11
- Contract end date
- 2013-08-23
- UEI
- DLJEK6XN1JX6
- Solicitation number
- 2012.2
- Topic code
- N122-135
Research abstract
Avogy has a unique approach to producing vertical GaN-on-GaN power devices that have fundamental advantages over silicon, silicon carbide, and lateral GaN devices. With this SBIR funding, we will demonstrate the feasibility of a normally-off vertical GaN transistor with a blocking voltage over 5000V, a threshold voltage greater than 1V, and specific on-resistance less than 30 mohm-cm2.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High Power Vertical Gallium Nitride (GaN) Transistors on Native GaN Substrates for Power Switching Applications
- Vertical GaN transistors on bulk GaN substrates
- Vertical GaN transistors on bulk GaN substrates
Research funding history
4 SBIR/STTR records share this UEI (2013–2014). Reported award amounts total $2,061,148. Reported amounts are not federal obligations.
Phases: Phase II, Phase I
Agencies: Department of Defense, Department of Energy