SBIR/STTR Research Award

Ultra-Coherent Semiconductor Laser Technology

Award identifier 9ec08a7e8f3762d7d128b877217d97ae28b22ce51b7e51df6c9944b1fee3d9ddAwarding agency Department of Defense · Army

Award amount

$149,999

Program and phase

STTR · Phase I

Award year

2014

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
Morton Photonics Incorporated
Proposal award date
2014-08-14
Contract end date
2015-02-17
UEI
D39JNGCYFKK3
Solicitation number
2014.A
Topic code
A14A-T005

Research abstract

In this STTR program, technology created at the University of California at Santa Barbara (UCSB) to fabricate silicon photonics based integrated laser devices, including wafer bonded gain elements, will be utilized to develop ultra-coherent integrated laser devices that are widely tunable. Novel laser designs developed by Morton Photonics, taking advantage of ultra-low loss microresonator based filters / reflectors, and benefiting from slow light effects, will be fabricated using the novel silicon photonics platform developed by UCSB. These integrated lasers will provide an ultra-coherent output, also with ultra-low relative intensity noise (RIN), and be fully tunable across the 1530nm to 1565nm wavelength range. The laser product developed through this program will take advantage of CMOS foundries and the tremendous cost and scaling advantages of silicon processing technology, leading to a high volume low cost product.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

18 SBIR/STTR records share this UEI (2007–2019). Reported award amounts total $8,862,843. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Science Foundation

Agency intelligence

Department of Defense

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