High-Power, Ultra-low Noise, Heterogeneously Integrated Lasers

In this program, Morton Photonics (MP) and its STTR partner Professor John Bowers and his research group at the University of California at Santa Barbara (UCSB) will develop two truly disruptive integrated laser devices: (1) A broadly tunable integrated laser with ultra-low linewidth, ultra-low relative intensity noise (RIN), and high output power; the Integrated Coherent Tunable Laser (ICTL), which supports wavelength division multiplexing (WDM) for high capacity coherent communications systems and networks, and for high channel count sensor systems and RF Photonics systems. (2) A single wavelength, high-power, ultra-low noise (ULN) integrated laser based upon MPs record-breaking Hybrid Lasers that have demonstrated linewidths as low as 15 Hz with an output power of over 100 mW. The ULN Extended-Distributed Bragg Reflector (E-DBR) devices will support single channel systems, or arrays of E-DBR lasers when required, for use in high performance RF Photonic and sensor systems. The ICTL and E-DBR devices developed through this program will take advantage of CMOS foundry based Silicon Photonics and the tremendous cost and scaling advantages of silicon processing technology, leading to a high volume low cost devices and Photonic Integrated Circuits (PIC) devices including them, with low cost, size, weight and power (CSWaP).