SBIR/STTR Research Award
High Temperature (300c) Silicon Carbide (SiC)-Based Integrated Gate Drivers for Wide Bandgap Power Devices
Award amount
$999,996Program and phase
SBIR · Phase IIAward year
2014Award details
- Awarding agency
- Department of Energy
- Branch
- Not reported
- Recipient company
- Arkansas Power Electronics International, Inc.
- Proposal award date
- 2014-07-28
- Contract end date
- 2016-07-27
- UEI
- QZMVB44SHW19
- Solicitation number
- DE-FOA-0001072
- Topic code
- 08d
Research abstract
In this Phase II proposal, APEI, Inc. will continue development of its patented high temperature gate driver technology, enabling the next generation of high-efficiency, high power density converters. At the conclusion of Phase II, APEI, Inc. will have designed, fabricated, and tested a high temperature (300 C) SiC application specific integrated circuit (ASIC) gate driver. The fabricated SiC ASIC gate driver will then be integrated into an APEI, Inc. power module, providing for a next generation smart power module solution.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High Power Density GaN-Based Power Converters for Grid-Tied Energy Storage
- A High Efficiency, High Power Density, GaN-Based DC-DC Converter for Grid-Tied Energy Storage Applications
- Extreme Temperature Radiation Tolerant Instrumentation for Nuclear Thermal Propulsion Engines
- A Modular High Voltage (> 10 kV), High Power Density SiC Power Package for Extreme Environments
- A 300C Power Module Using Wide Bandgap Devices, Advanced Materials/Processes, and High Temperature Integrated Circuits for Geothermal Applications
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Flexible Low-cost Platform for Beam Pattern Optimization
- Flexible Low-cost Platform for Beam Pattern Optimization
- Low-Cost Roll Process For Flexible & Rigid Glass OLED Lighting Substrates: Providing Encapsulation-Ready Enhanced Light Extraction and a Smooth Current Spreading Conductor
- Additive-Manufactured Solid-State Lighting Optics and Luminaire Assemblies
- Robust Phosphor Encapsulation for Wafer Scale Packaging of LEDs Topic: 8d
Research funding history
59 SBIR/STTR records share this UEI (2003–2015). Reported award amounts total $19,645,087. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation, Department of Transportation