SBIR/STTR Research Award
Metal-Oxides as Radiation-Hard Microelectronic Channel Materials
Award amount
$149,972Program and phase
SBIR · Phase IAward year
2014Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Threat Reduction Agency
- Recipient company
- Aneeve
- Proposal award date
- 2014-06-25
- Contract end date
- 2015-01-24
- UEI
- VKJMA9AF76Y8
- Solicitation number
- 2013.3
- Topic code
- DTRA133-001
Research abstract
ABSTRACT: Metal-oxide devices offer power dissipation advantages such as low standby power dissipation, better defect resilience versus silicon, superior electronic and magnetic properties, and are broadly Si compatible hence their attractiveness and candidacy fo BENEFITS: Radiation hardened microelectronics are critical for future Department of Defense (DoD) systems where devices are required to function in high radiation environments. Environments with high levels of ionizing radiation can cause both single event effects
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- SBIR Phase I: Printed 3-D All Single-Walled Carbon Nanotube Transistors and Integrated Circuits
- Graphene Memory Device
- Carbon Nanotube (CNT) Based Electronic Components for Unmanned Aircraft Systems (UAS)
- Thin-Film Multiferroic Heterostructures for Frequency-Agile RF Electronics
- Carbon Nanotube (CNT) Based Electronic Components for Unmanned Aircraft Systems (UAS)
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
9 SBIR/STTR records share this UEI (2008–2014). Reported award amounts total $2,320,785. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation