Thin-Film Multiferroic Heterostructures for Frequency-Agile RF Electronics
Award amount
$99,983Program and phase
STTR · Phase IAward year
2011Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- Aneeve
- Proposal award date
- 2011-09-06
- Contract end date
- Not reported
- UEI
- VKJMA9AF76Y8
- Solicitation number
- 2011.A
- Topic code
- A11a-T018
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Metal-Oxides as Radiation-Hard Microelectronic Channel Materials
- SBIR Phase I: Printed 3-D All Single-Walled Carbon Nanotube Transistors and Integrated Circuits
- Graphene Memory Device
- Carbon Nanotube (CNT) Based Electronic Components for Unmanned Aircraft Systems (UAS)
- Carbon Nanotube (CNT) Based Electronic Components for Unmanned Aircraft Systems (UAS)
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Thin-Film Multiferroic Heterostructures for Frequency-Agile RF Electronics
- Thin-Film Multiferroic Heterostructures for Frequency-Agile RF Electronics
Research funding history
9 SBIR/STTR records share this UEI (2008–2014). Reported award amounts total $2,320,785. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation