Low-Cost, Manufacturable, 6-Inch Wafer Bonding Process for Next-Generation 5-Junction IMM+Ge Photovoltaic Devices
Award amount
$125,000Program and phase
SBIR · Phase IAward year
2014Award details
- Awarding agency
- National Aeronautics and Space Administration
- Branch
- Not reported
- Recipient company
- MICROLINK DEVICES INC
- Proposal award date
- 2014-06-20
- Contract end date
- 2014-12-19
- UEI
- DHJPU2QYVQK7
- Solicitation number
- Not reported
- Topic code
- Z1.01
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Radiation Resistant Solar and Laser Power Converter for Lunar Applications
- Ultra-Thin, Flexible InGaP Solar Arrays Embedded In Solar Sails for Power Generation
- Laser Power Beaming to Sustain Small UAVs using ~1070 nm Source and Receiver
- High Efficiency GaN HBT for X-band Satellite Radar
- Array for High Efficiency Power Beaming
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Characterization and Mitigation of Radiation and High Temperature Effects in SiC Power Electronics
- Radiation and High Temperature Tolerant GaN Power Electronics
- High Power Ga2O3-Based Schottky Diode
- Electrospray Propulsion Engineering Toolkit (ESPET)
- Nanostructured Dielectrics for High-Temperature Capacitors
Research funding history
99 SBIR/STTR records share this UEI (2001–2025). Reported award amounts total $39,253,763. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation