Extremely Uniform, High Quality, and Isotopically Pure SiC Epiwafers for Quantum

For several decades Mainstream Engineering and collaborative Team have developed specialty SiC chemical mechanical polishing (CMP) of, and chemistry and processes for, extremely high quality, low-defect hetero- and homo- epitaxial growth SiC epilayers by both chemical vapor deposition (CVD) and physical vapor transport (PVT). We recently showed that our novel process and chemistry for both the epitaxial growth and subsequent oxidation results in an oxide/semiconductor interface with a trap density over 40x lower than standard industrial processes, and 3x better than the state of the art in the literature for as-grown gate oxides. We also demonstrated production of isotopically pure source materials and growth of isotopically pure SiC epitaxial films on 100 mm SiC wafer. The Mainstream Team will achieve the targets of this Phase II program using foundry-scalable and commercially viable processes by achieving the following objectives: obtain a total thickness variation (TTV) over 100 mm SiC wafers less than 20 nm, produce 200 nm – 1 µm isotopically pure SiC on SiO2 with an optical loss of less than 1 dB/cm, a roughness less than 0.5 nm, and a TTV less than 20 nm over a 100 mm wafer.