SBIR/STTR Research Award
Gallium Nitride (GaN)-based High Efficiency Switch/Transistor for L-Band RF Power Amplifier Applications
Award amount
$77,868Program and phase
STTR · Phase IAward year
2013Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- MIMOCLOUD INC
- Proposal award date
- 2013-07-01
- Contract end date
- 2014-04-30
- UEI
- KS8VTNJSQ1D6
- Solicitation number
- 2013.A
- Topic code
- N13A-T025
Research abstract
This research seeks to develop a method of developing solid-state power amplifiers that operate at 300 Volts, achieve 100 Watt output and greater than 90% efficiency at 1 GHz with 10% bandwidths. We will seek to demonstrate switch-mode amplifiers that use a novel gate design with Gallium Nitride forming the basis for solid state power amplification.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Innovative Data Compression Algorithms to Increase System Throughput Efficiency on Navy Ship-to-Shore Communication Networks
- LCS Unmanned Vehicle Sensor Data Compression
- Mission Prioritized Lossless Data Compression
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Gallium Nitride (GaN)-based High Efficiency Switch/Transistor for L-Band RF Power Amplifier Applications
- Gallium Nitride (GaN)-based High Efficiency Switch/Transistor for L-Band RF Power Amplifier Applications
Research funding history
4 SBIR/STTR records share this UEI (2011–2015). Reported award amounts total $337,689. Reported amounts are not federal obligations.
Phases: Phase I
Agencies: Department of Defense