Gallium Nitride (GaN)-based High Efficiency Switch/Transistor for L-Band RF Power Amplifier Applications

The goal of Phase II of this STTR project is to optimize the GaN transistor obtained in Phase I to deliver a 100-W power amplifier with 90% power added efficiency (PAE) at 1 GHz. Emphasis will be put on optimizing output capacitances, improving gate control and further improving epitaxial wafers. We will finalize our design of power amplifier circuit module based on the improved device and our proprietary device models. Device reliability and scalability in output power will be extensively studied.Upon the completion of Phase II base period, we expect to deliver a working prototype of this ultra-high-efficiency PA assembled on a test board. The technology prototype is expected to open up the possibility to replace vacuum-tube-based power amplifiers with solid-state power amplifiers. Such a case will impact a broad range of applications including phase-array radar systems, communication systems, energy transfer modules, and imaging modules in medical equipment. At the end of this project, we will be well positioned to initiate a unique product line that leads the application of solid-state device in ultra-high efficiency power amplifiers for both military and commercial markets.