SBIR/STTR Research Award

Radiation Hard GaInP Photomultiplier Chip(TM)

Award identifier 182b5a8ae99c7356f9a605cfd96cde05d58dd9d7b7917e5d80a223334663619fAwarding agency Department of Energy

Award amount

$150,000

Program and phase

SBIR · Phase I

Award year

2013

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
Lightspin Technologies Inc
Proposal award date
2013-02-19
Contract end date
Not reported
UEI
M29HE5CKLCF8
Solicitation number
DE-FOA-0000760
Topic code
37 b

Research abstract

LightSpin Technologies, Inc. proposes to develop radiation-hard GaInP Photomultiplier Chips. GaInP is extraordinarily radiation hard, capable of withstanding at least 100,000-fold higher radiation flux than silicon. LightSpins GaInP Photomultiplier Chip technology enables the production of GaInP photon detectors with high gain, low noise, fast rise/fall times, and wide dynamic range across photosensitive areas up to 1 cm2. A GaInP Photomultiplier Chip is capable of both single photon detection and excellent photon number resolving, with high detection efficiency for both ultraviolet and visible light photons. Some of the specialized photodetectors used in high energy physics experiments are bombarded by a high flux of high energy particles particles. 70 million times more energetic than those detected in medical X-rays yet the detectors need to remain extremely sensitive for years despite this hellish dose of particles. Over time, these energetic particles damage the photodetectors, causing defects that ruin performance. Next generation high energy physics experiments plan upgrades to increase the radiation flux, resulting in higher damage rates that are expected to cause most solid-state photodetectors to fail. LightSpin is developing an intrinsically radiation-hard GaInP Photomultiplier Chip. GaInP is predicted to be more 100,000s of times more radiation hard than silicon, capable of withstanding extremely high irradiation fluxes. Unlike exotic approaches using diamond, GaN, or SiC, LightSpins GaInP Photomultiplier ChipTM is an efficient detector of the light emitted by most scintillators, is inexpensive, and is readily produced on high volume/low cost GaAs substrates. LightSpins innovative Photomultipiler ChipTM technology provides single photon sensitivity and wide dynamic range, ideally matched to scintillators emitting between 280 and 650 nm. Commercial Applications and Other Benefits: LightSpins GaInP Photomultiplier Chip provides an affordable, fast, large area, solid-state detector solution with single-photon sensitivity and wide dynamic range. The low noise and high speed of the GaInP Photomultiplier ChipTM make it an ideal replacement for the 100-year-old vacuum photomultiplier tube (PMT) in a wide range of commercial applications, including scientific instruments, biomedical instruments, positron emission tomography (PET), and remote sensing applications. The GaInP Photomultiplier ChipTM can directly address the majority of the $0.5 billion PMT market, enabling improved performance, cost, size, and reliability.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

31 SBIR/STTR records share this UEI (2002–2021). Reported award amounts total $9,503,040. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Health and Human Services, Department of Energy, National Aeronautics and Space Administration, National Science Foundation

Agency intelligence

Department of Energy

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