Radiation-Hardened, Resistive Random Access Memory

ABSTRACT: Tezzaron proposes to develop and demonstrate a 64Mb 3D integrated MRAM device comprising one non-volatile memory cell layer and one radiation hardened I/O logic and control layer. This memory device will address the industry"s next generation needs for nonvolatile memory density and also, because of its virtually unlimited wearout lifetime, act as next main memory, reducing overall component count, size, weight and power. The device will have the capacity for expansion up to 1Gb with the addition of more memory cell layers. This program will ultimately produce components for use in space-based systems as well as other DoD systems. BENEFIT: The proposed device significantly increases the density of aerospace/space/military hardened non-volatile memory. The MRAM memory device at the new propose range of device capacities to 1Gb would also allow consolidation of the volatile and non-volatile memories reducing board space and power. This provides fundementally increased computing capability for space applications.