Rapid, contamination-free growth of larger size aluminum oxynitride (AlON) and aluminum nitride (AlN) single crystals

The objective of this SBIR Phase II effort is to grow larger size (50 mm diameter x 25 mm thick or larger) single crystals of aluminum oxynitride (AlON) and aluminum nitride (AlN) by refining and optimizing the rapid and contamination free growth method developed at the Phase I stage. The major properties of the single crystals will be quantitatively characterized and evaluated. The crystals should be at the single crystal phase, have a high linear transmittance (85 % or higher) over the entire UV-VIS-IR spectral range, and are optically isotropic. Elastic constants and dielectric properties of larger size samples (50 mm diameter x 25 mm thick, developed at the Phase II stage) will be measured by ultrasonic pulse echo technique and compared with the data obtained from the small samples (~ 2 mm cube) measured by resonant ultrasound spectroscopy (RUS). Phase II effort also includes investigating the killer applications of these unique single crystals and commercializing them such as (1) providing the critical technical data for studying the materials in extreme dynamic environments (such as transparent armors), (2) broadband, high strength optical windows and domes, (3) high power electronic substrates, and (4) robust, broad temperature range actuators and sensors.