Rapid, contamination free growth of large single crystals of aluminum oxynitride (AlON)

In this project, we will develop and demonstrate an innovative process for growing large size single crystal aluminum oxynitride (AlON). The proposed process is not only contamination-free but also preventing volatilization and maintaining the stoichiometry of the sample materials. This is particularly important to grow large size AlON single crystal because it can be decomposed at the melting temperature without proper environmental control. Furthermore, it is a rapid growing process so that it can be scaled up for highly efficient and low-cost production of large size AlON single crystals. AlON single crystal samples with all the required properties ( e.g., > 2 cubic millimeters, 80% visible in-line transmittance, stoichiometric composition, optically isotropic single crystals., and the acceptable cubic elastic constants) will be grown at the Phase I stage. A higher quality (e.g., 85% visible in-line transmittance) and larger size (50 millimeter diameter x 25 mm millimeter thick) will be developed at the Phase II stage by refining and optimizing the growing method and procedures developed at the Phase I stage.