SBIR/STTR Research Award

Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters

Award identifier 4082a358170f05584fc638721902801c5b538262dd9ab3e85dba5b2ba500864cAwarding agency National Aeronautics and Space Administration

Award amount

$599,999

Program and phase

SBIR · Phase II

Award year

2011

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
Arkansas Power Electronics International, Inc.
Proposal award date
2011-06-01
Contract end date
2013-08-31
UEI
QZMVB44SHW19
Solicitation number
Not reported
Topic code
S3.04

Research abstract

In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) power supply for the Power Processing Unit (PPU) of Hall Effect thrusters. This program specifically targets the design of a PPU for the HiVHAC (High Voltage Hall ACcelerator) thruster, with target specifications of 80-160V input, 200-700V / 5A output, efficiency greater than 96%, and peak power density in excess of 2.5 kW/kg. The PPU under development utilizes SiC JFET power switches; components which APEI, Inc. has irradiated under TID conditions to greater than 3 MRad with little to zero change in device performance.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

59 SBIR/STTR records share this UEI (2003–2015). Reported award amounts total $19,645,087. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation, Department of Transportation

Agency intelligence

National Aeronautics and Space Administration

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