SBIR/STTR Research Award

Radiation Hardening Manufacturing Technology

Award identifier e20973f098d4338d8db03bbc4375725e44b863cb9391ed966c6107d0531a271cAwarding agency Department of Defense · Missile Defense Agency

Award amount

$100,000

Program and phase

SBIR · Phase I

Award year

2011

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Space Micro Inc.
Proposal award date
2011-05-12
Contract end date
Not reported
UEI
ED9EEK4ZRZG4
Solicitation number
2010.3
Topic code
MDA10-021

Research abstract

Radiation hardened nonvolatile memories for space is still primarily confined to EEPROM. There is no high density effective or cost effective NVM solution available to space electronics designers. DoD, NASA, and DTRA R & D investment funding of CRAM, MRAM, and FRAM at the major players (BAE Systems and Honeywell) over the past 10-15 years have not yet resulted in cost effective, high density, producible available space products. Current space qualified nonvolatile memory densities start from monolithic die of 1 megabit to multiple die modules of up to 20 megabit.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

150 SBIR/STTR records share this UEI (2002–2023). Reported award amounts total $58,449,422. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Homeland Security

Agency intelligence

Department of Defense

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