Anti-Reverse Engineering (RE) Techniques

Crossfield intends to show an anti-reverse engineering methodology that encompasses several innovative features to thwart reverse engineering attempts by third parties. This anti-reverse engineering methodology exploits doped resistive paths (DRPs) in the substrate and/or at the poly-silicon transistor gate levels. They can be formed by overlaying dopant fields implanted with multiple energies and species in the same region of device to generate unique electrical responses. The DRPs can be formed by using implants that are already a part of the semiconductor device process flow and made on open real estate regions on floor-plans of the existing device designs. With clever placement, the DRPs can be hidden either in the periphery areas, in-between regular circuits, or disguised within standard logic cells.