SBIR/STTR Research Award
Inverted 3J Tandem Thermophotovoltaic Modules
Award amount
$99,486Program and phase
SBIR · Phase IAward year
2011Award details
- Awarding agency
- National Aeronautics and Space Administration
- Branch
- Not reported
- Recipient company
- Spire Corporation
- Proposal award date
- 2011-02-18
- Contract end date
- 2011-09-29
- UEI
- RG46KJGARZF4
- Solicitation number
- Not reported
- Topic code
- S3.03
Research abstract
Spire Semiconductor proposes to make an InGaAs-based three-junction (3J) tandem thermophotovoltaic (TPV) cell to utilize more of the blackbody spectrum (from a GPHS) efficiently. Semi-insulating InP wafers will be used for monolithically integrated module (MIM)compatibility and to achieve low free-carrier absorption. In Phase 1, we will design, epitaxially grow, and process large area single junction test cells for each of the three bandgaps proposed (to evaluate material quality), as well as for a full tandem cell structure. In Phase 2, we would further refine the structure and incorporate the material into MIM modules.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Portable Laser Hazard Identification and Monitoring System
- Nano-Crystalline Ceramic Coatings for the Reduction of Sliding Resistance of Orth
- A Synthetic Biology Toolbox for Natural Product Discovery from Actinomycetes
- Next-Generation, LED-based, Adjustable Spectrum, Pulsed Solar Simulator
- Nano-Crystalline Ceramic Coatings for the Reduction of Sliding Resistance of Orth
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- High Performance Electrical Power System for LEO Mission
- Ultracapacitor Based Power Supply for CubeSats
- Development of Diamond Vacuum Differential Amplifier for Harsh Environment Power Electronics
- Lightweight CNT Shielded Cables for Space Applications
- Monolithically Integrated Rad-Hard SiC Gate Driver for 1200 V DMOSFETs
Research funding history
429 SBIR/STTR records share this UEI (1983–2014). Reported award amounts total $73,907,551. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, National Science Foundation, Department of Energy, Department of Health and Human Services, Department of Commerce