Monolithically Integrated Rad-Hard SiC Gate Driver for 1200 V DMOSFETs

This two-phase SBIR program targets the need for highly integrated SiC-based electronics systems by developing gate drive circuitry that can be fully integrated with 4H-SiC power switching devices, enabling eventual realization of a monolithic power switching platform. Specifically, the final goal of this program is to develop and demonstrate a fully integrated, isolated gate driver architecture, having an integrated SiC power MOSFET. In addition to integrated resistors and capacitors, development of SiC CMOS technology will entail the demonstration of lateral SiC NMOSFETs and the more challenging SiC PMOSFET devices with adequate performance and radiation hardness. During Phase I, an NMOS-only gate drive buffer circuit was designed and implemented on the same host substrate used for fabricating 1200 V SiC DMOSFETs. Phase II will focus on integrating the gate drive buffer IC fabricated during Phase I with a 1200 V rated power SiC DMOSFET. Process and device development of a SiC PMOS technology will be conducted during Phase II, in pursuit of a SiC CMOS gate drive circuit. The fabricated power and lateral SiC devices will be subjected to extensive radiation testing to investigate the degradation pathways of this monolithic power switching device, when exposed to high radiation environments.