SBIR/STTR Research Award

High-Efficiency GaN-Based UV Imaging Photocathodes for Application in Harsh Environments

Award identifier 46e83393de4bcfef9446487006f3dfb7ae6de4ab15c43063d342f690b5310f8dAwarding agency National Aeronautics and Space Administration

Award amount

$99,948

Program and phase

SBIR · Phase I

Award year

2011

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
SVT ASSOCIATES INC
Proposal award date
2011-02-18
Contract end date
2011-09-29
UEI
MLVQMLJLC139
Solicitation number
Not reported
Topic code
S1.05

Research abstract

This proposal is directed toward the development of innovative high-efficiency UV photocathodes based on the wide bandgap III-nitride semiconductors for reliable operation at high temperature and high radiation environments for future NASA missions near the Sun and in deep atmospheres of Venus and Jupiter. The proposed work includes the incorporation of these photocathodes on Al2O3-based high-temperature micro-channel plates (MCPs) for high-sensitivity UV photon counting and imaging

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

165 SBIR/STTR records share this UEI (1990–2014). Reported award amounts total $29,785,067. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation

Agency intelligence

National Aeronautics and Space Administration

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