SBIR/STTR Research Award

Embedded 3D Nonvolatile Memory

Award identifier c4050a19f7ec30397cfa440b91edf663966bf4971aec3680fba8be96b25baa7cAwarding agency National Aeronautics and Space Administration

Award amount

$99,994

Program and phase

SBIR · Phase I

Award year

2011

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
Privatran, LLC
Proposal award date
2011-02-18
Contract end date
2011-09-29
UEI
GMG1QFG3GS35
Solicitation number
Not reported
Topic code
X6.02

Research abstract

Integrated circuits in NASA spacecraft and vehicle electronics must operate over large temperature extremes and mitigate radiation effects that can result in upset and/or destruction of devices. PrivaTran has previously demonstrated a two-terminal, electronically-programmable resistor as a nonvolatile memory (NVM) element with performance metrics exceeding those of competing technologies, and herein proposes this device as a radiation hardened NVM array formed within the metal interconnect layers of the integrated circuit and fully integrated in a 3D architecture, resulting in significant savings in weight, power and reliability.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

15 SBIR/STTR records share this UEI (2007–2014). Reported award amounts total $4,264,321. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Science Foundation, National Aeronautics and Space Administration

Agency intelligence

National Aeronautics and Space Administration

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