SBIR/STTR Research Award
Low-noise amplifier (LNA) and Power amplifier (PA) for Radio-Frequency (RF) System-onChip (SoC) Applications on Silicon on Sapphire (SOS) Substrates
Award amount
$748,363Program and phase
SBIR · Phase IIAward year
2011Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Microelectronics Activity
- Recipient company
- Tahoe RF Semiconductor Inc.,
- Proposal award date
- 2011-02-01
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- 2009.2
- Topic code
- DMEA-092-002
Research abstract
Tahoe RF will design, simulate, fabricate and test a low noise amplifier (LNA) and companion power amplifier (PA). The feasibility study for this design was completed during the Phase I activities. The design will be fabricated using a noise improved device models of a 0.25 m silicon-on-sapphire (SOS) process.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Low-noise amplifier (LNA) and Power amplifier (PA) for Radio-Frequency (RF) System-on–Chip (SoC) Applications on Silicon on Sapphire (SOS) Substrates
- Low-noise amplifier (LNA) and Power amplifier (PA) for Radio-Frequency (RF) System-on–Chip (SoC) Applications on Silicon on Sapphire (SOS) Substrates