SBIR/STTR Research Award
Low-noise amplifier (LNA) and Power amplifier (PA) for Radio-Frequency (RF) System-on–Chip (SoC) Applications on Silicon on Sapphire (SOS) Substrates
Award amount
$98,268Program and phase
SBIR · Phase IAward year
2009Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Microelectronics Activity
- Recipient company
- Tahoe RF Semiconductor Inc.,
- Proposal award date
- 2009-12-04
- Contract end date
- 2010-04-30
- UEI
- Not reported
- Solicitation number
- 2009.2
- Topic code
- DMEA-092-002
Research abstract
This proposal explores the feasibility of a communication system based on the modulation of a magnetic field. The principle of mutual induction states that the voltage induced by mutual induction in one inductor is always proportional to the rate of current change in the other inductor. If one inductor is in the transmitter, and the other inductor is in the receiver, the induced voltage in the receiving inductor shall follow the modulation of the current in the transmitting inductor.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Low-noise amplifier (LNA) and Power amplifier (PA) for Radio-Frequency (RF) System-onChip (SoC) Applications on Silicon on Sapphire (SOS) Substrates
- Low-noise amplifier (LNA) and Power amplifier (PA) for Radio-Frequency (RF) System-on–Chip (SoC) Applications on Silicon on Sapphire (SOS) Substrates