SBIR/STTR Research Award

Nanometer Precision in Maskless Lithography via Software

Award identifier 897170eb9a3e2f0a6e0355f4b3eb422cc4a13e21646b019f37a9bdf8a0e39c26Awarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$1,559,220

Program and phase

SBIR · Phase II

Award year

2010

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
LUMARRAY, INC.
Proposal award date
2010-06-22
Contract end date
2012-04-30
UEI
T2HXT55KVA34
Solicitation number
2007.1
Topic code
N07-035

Research abstract

LumArray, Inc. proposes under Phase II to further improve its maskless zone-plate-array lithography system, to meet the requirements of manufacturers of custom chips for the DoD. Under Phase I, a prototype alpha tool was developed, the ZP-150ATM. Under Phase II we will develop and demonstrate a beta tool, the ZP-150BTM, which will have features beyond those available on the alpha tool. Specifically, the ZP-150BTM will have: (1) exposure-dose monitoring and correction of exposure-dose errors; (2) enhanced throughput by virtue of multiple spatial-light modulators, variable spot size, and improved spatial-light modulation; (3) higher-speed computation via a graphics processing unit (GPU); and (4) revisions to support these added functionalities. The ZP-150BTM will be designed for compatibility with future improvements in resolution afforded by absorbance-modulation optical lithography, a LumArray invention. LumArray’s maskless lithograpy systems are compatible with both mask making and direct writing on substrates. These systems will radically streamline and speed up the design and manufacture of custom circuits, especially those manufactured in low volume for the DoD. This in turn will enhance the capability and responsiveness of military systems.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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