SBIR/STTR Research Award
Lithography Cost Reduction for Rad Hard Integrated Circuits
Award amount
$149,838Program and phase
SBIR · Phase IAward year
2016Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Threat Reduction Agency
- Recipient company
- LUMARRAY, INC.
- Proposal award date
- 2015-12-08
- Contract end date
- 2016-07-13
- UEI
- T2HXT55KVA34
- Solicitation number
- 2014.3
- Topic code
- DTRA143-008
Research abstract
LumArray proposes in Phase I to demonstrate that its direct-write maskless-photolithography system, the ZP-150, is capable of performing aligned cuts in 1D-grids suitable for the 45 nm node, in addition to writing patterns of arbitrary geometry as required in custom ASICs and a wide range of other DoD and Aerospace applications. In Phase II LumArray will propose to make upgrades to its ZP-150 system that will enable it to meet the needs of 1D gridded lithography at nodes below 45 nm.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Direct-Write Optical Lithography for High-Energy Diffractive Optics
- Computationally Optimized Metamaterial-Based Low-Power Integrated Photonics For Miniaturization And Ultra-Large-Scale Integration
- DIRECT WRITING OF X-RAY GRATINGS USING ZONE-PLATE-ARRAY LITHOGRAPHY (ZPAL)
- Direct Writing of X-ray Gratings Using Zone-Plate-Array Lithography
- Flexible Micro- and Nano-Patterning Tools for Photonics
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Lithography Cost Reduction for Rad Hard Integrated Circuits
- Lithography Cost Reduction for Rad Hard Integrated Circuits
Research funding history
19 SBIR/STTR records share this UEI (2004–2022). Reported award amounts total $10,200,591. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Energy