SBIR/STTR Research Award
Template-based Lithography for Advanced Low-Volume Electronics
Award amount
$749,605Program and phase
SBIR · Phase IIAward year
2010Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Advanced Research Projects Agency
- Recipient company
- LITHOGRAPHIC TECHNOLOGY CORP. DBA AMPHIB
- Proposal award date
- 2010-05-10
- Contract end date
- 2011-05-09
- UEI
- Not reported
- Solicitation number
- 2008.2
- Topic code
- SB082-043
Research abstract
The goal of the Phase II of the project for template IL lithography is to develop a prototype system capable of regular interferometric based template lithography for cost effective, high resolution nanofabrication of low volume electronics to demonstrate the resolution and throughput performance necessary for 45nm lithography generations and beyond. This Phase II proposal will advance of the findings of Phase I of the project to allow for the assembly of a prototype template IL system that will be capable of high resolution, low distortion interferometric patterning. At a numerical aperture of 1.2, the minimum half-pitch geometry will be 40nm, which corresponds to the 32nm technology node. The minimum field size will by 10mm with much less than 50nm of distortion and much less than 100 mWave rms of wavefront aberration. The throughput of the system will be at least 10 wafers per hour.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Template-based Lithography for Advanced Low-Volume Electronics
- Low Cost, Sub-32nm Hybrid Imprint & E-beam Template for Low-Volume Manufacturing
- Integrating Molecular Transfer Lithography with Electron Beam Lithography for Low-Volume Sub-32 nm CMOS Processing