SBIR/STTR Research Award

Template-based Lithography for Advanced Low-Volume Electronics

Award identifier 1cece536cb1dda2433ac019bfc324887521dbb19a702a4d459929c51421e53d9Awarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$749,605

Program and phase

SBIR · Phase II

Award year

2010

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
LITHOGRAPHIC TECHNOLOGY CORP. DBA AMPHIB
Proposal award date
2010-05-10
Contract end date
2011-05-09
UEI
Not reported
Solicitation number
2008.2
Topic code
SB082-043

Research abstract

The goal of the Phase II of the project for template IL lithography is to develop a prototype system capable of regular interferometric based template lithography for cost effective, high resolution nanofabrication of low volume electronics to demonstrate the resolution and throughput performance necessary for 45nm lithography generations and beyond. This Phase II proposal will advance of the findings of Phase I of the project to allow for the assembly of a prototype template IL system that will be capable of high resolution, low distortion interferometric patterning. At a numerical aperture of 1.2, the minimum half-pitch geometry will be 40nm, which corresponds to the 32nm technology node. The minimum field size will by 10mm with much less than 50nm of distortion and much less than 100 mWave rms of wavefront aberration. The throughput of the system will be at least 10 wafers per hour.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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