SBIR/STTR Research Award

Template-based Lithography for Advanced Low-Volume Electronics

Award identifier 80f3b9c5b499ebf0fbbfebd081f2c3a25681abf2f8f06521e73b07eed094a0ecAwarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$98,660

Program and phase

SBIR · Phase I

Award year

2009

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
LITHOGRAPHIC TECHNOLOGY CORP. DBA AMPHIB
Proposal award date
2009-01-27
Contract end date
2009-09-30
UEI
Not reported
Solicitation number
2008.2
Topic code
SB082-043

Research abstract

The goal of the proposed project is to develop regular interferometric based template lithography and demonstrate its feasibility for cost effective, high resolution nanofabrication of low volume electronics. The challenges of the project are based on the requirement to meet the needs of sub-32nm CMOS device fabrication using technologies that are not currently addressed by the ITRS. Design strategies will be developed for the interferometric lithography (IL) imaging system, the integration of the system to a projection lithography (PL) or electron beam lithography (EBL) trim operation, and the identification of suitable processes for template based lithography for 32nm and sub-32nm application. This will be carried out using current design fundamentals of the ASI XIS interference lithography system scaled up to meet CMOS device fabrication needs.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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