SBIR/STTR Research Award
High Radiation Resistance Inverted Metamorphic Solar Cell
Award amount
$100,000Program and phase
SBIR · Phase IAward year
2010Award details
- Awarding agency
- National Aeronautics and Space Administration
- Branch
- Not reported
- Recipient company
- MICROLINK DEVICES INC
- Proposal award date
- 2010-01-29
- Contract end date
- 2010-07-29
- UEI
- DHJPU2QYVQK7
- Solicitation number
- Not reported
- Topic code
- S3.03
Research abstract
The innovation in the proposed SBIR Phase I project is the development of a unique triple unction inverted metamorphic technology (IMM), which will enable the manufacture of very lightweight, low-cost InP-based multijunction solar cells. The proposed IMM technology will consist of an all indium and phosphorous-based structure, which is designed to improve the radiation resistance properties of the triple junction solar cell. Because of the intrinsic radiation hardness of InP materials, this material system is of great interest for building solar cells suitable for deployment in very demanding radiation environments such as medium earth orbit and missions to the outer planets. It is expected that an efficiency greater than 30% could be realized with this new IMM structure.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Radiation Resistant Solar and Laser Power Converter for Lunar Applications
- Ultra-Thin, Flexible InGaP Solar Arrays Embedded In Solar Sails for Power Generation
- Laser Power Beaming to Sustain Small UAVs using ~1070 nm Source and Receiver
- High Efficiency GaN HBT for X-band Satellite Radar
- Array for High Efficiency Power Beaming
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- High Performance Electrical Power System for LEO Mission
- Ultracapacitor Based Power Supply for CubeSats
- Development of Diamond Vacuum Differential Amplifier for Harsh Environment Power Electronics
- Lightweight CNT Shielded Cables for Space Applications
- Monolithically Integrated Rad-Hard SiC Gate Driver for 1200 V DMOSFETs
Research funding history
99 SBIR/STTR records share this UEI (2001–2025). Reported award amounts total $39,253,763. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation