SBIR/STTR Research Award
InGaN High Temperature Photovoltaic Cells
Award amount
$599,986Program and phase
SBIR · Phase IIAward year
2010Award details
- Awarding agency
- National Aeronautics and Space Administration
- Branch
- Not reported
- Recipient company
- Integrated Micro Sensors, Inc.
- Proposal award date
- 2010-01-19
- Contract end date
- 2012-04-18
- UEI
- HKDSBLXQQLL1
- Solicitation number
- Not reported
- Topic code
- S3.03
Research abstract
The objectives of this Phase II project are to develop InGaN photovoltaic cells for high temperature and/or high radiation environments to TRL 4 and to define the development path for the technology to TRL 5 and beyond. The project will include theoretical and experimental refinement of device structures produced in the Phase I, as well as modeling and optimization of solar cell device processing. The devices will be tested under concentrated AM0 sunlight, at temperatures from 100ºC to 250ºC, and after exposure to ionizing radiation. The results are expected to further verify that InGaN can be used for high temperature / high radiation capable solar cells in NASA space missions.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Drastic Improvements in Bonding of Highly Dissimilar Materials
- High-Speed Radiation Tolerant Avalanche Photodiodes Based on InGaN for Space Altimeter Systems
- Miniature Intelligent Wireless Fire Detector System
- Drastic Improvements in Bonding of Fiber Reinforced Multifunctional Composites
- Drastic Improvements in Bonding of Fiber Reinforced Multifunctional Composites
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- High Performance Electrical Power System for LEO Mission
- Ultracapacitor Based Power Supply for CubeSats
- Development of Diamond Vacuum Differential Amplifier for Harsh Environment Power Electronics
- Lightweight CNT Shielded Cables for Space Applications
- Monolithically Integrated Rad-Hard SiC Gate Driver for 1200 V DMOSFETs
Research funding history
27 SBIR/STTR records share this UEI (2001–2013). Reported award amounts total $6,557,770. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation, Department of Health and Human Services