SBIR/STTR Research Award

Novel Highly-Linear Imprint Nanowire FET

Award identifier 65deb4924c2562ce8cec4593a2199d6d6e05949e61d18d3637196406602bd4aeAwarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$98,964

Program and phase

SBIR · Phase I

Award year

2009

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
NANOHMICS INC
Proposal award date
2009-12-30
Contract end date
2010-08-30
UEI
K39ENMXNLA73
Solicitation number
2009.2
Topic code
SB092-011

Research abstract

Nanohmics proposes to design a nanowire-based FET (NWFET) around an advanced nanolithographic imprint methodology which will lead to a scalable and economically competitive manufacturing process. The NWFET will consist of Si nanowires etched from an epitaxially deposited single crystal layer of Si, followed by silicon dioxide dielectric, then the gate, source, and drain structures. As opposed to other construction methodologies, this device will employ a very high density of current carrying nanowires for increased power density and reduced bias voltage requirements. Advanced modeling techniques will be used to optimize the linearity, power consumption, and bandwidth.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

306 SBIR/STTR records share this UEI (2003–2025). Reported award amounts total $109,302,435. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, Department of Health and Human Services, Department of Homeland Security, Department of Agriculture

Agency intelligence

Department of Defense

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