SBIR/STTR Research Award

Planar, High Frequency, Power Conversion Device Technology

Award identifier 62011958b1252a6f1711a71a7ee6f9c7f71821b8b634fd82e3c3fc355a5c844fAwarding agency Department of Defense · Navy

Award amount

$69,485

Program and phase

STTR · Phase I

Award year

2009

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Award details

Awarding agency
Department of Defense
Branch
Navy
Recipient company
VELOX SEMICONDUCTOR CORP.
Proposal award date
2009-06-29
Contract end date
2010-04-30
UEI
Not reported
Solicitation number
2009.A
Topic code
N09-T023

Research abstract

The team of Velox Semiconductor Corporation (Velox) and Rensselaer Polytechnic Institute (RPI), proposes to demonstrate the feasibility of using a single, monolithic, all-GaN integrated Diode(s) Driven Gate (DDG) HFET to achieve normally-off device operation with specifications required for Navy applications. Utilizing this structure, the team intends to demonstrate an initial normally-off device with threshold voltage (VT) higher than 2.5V (Phase I) without jeopardizing other Hetero-junction Field Effect Transistor (HFET) performance indicators, such as specific on-resistance (Ron), maximum current density (Jd,max) and switching frequency (f). This solution will provide a significant device performance and reliability improvement due to the ability to optimize the power transistor in the structure.

Technology keywords

Not reported

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Agency intelligence

Department of Defense

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